Epitaxial diamond-hexagonal silicon nano-ribbon growth on (001) silicon

Epitaxial diamond-hexagonal silicon nano-ribbon growth on (001) silicon

Silicon crystallizes in the diamond-cubic phase and shows only a weak emission at 1.1 eV. Diamond-hexagonal silicon however has an indirect bandgap at 1.5 eV and has therefore potential for application in opto-electronic devices. Here we discuss a method based on advanced silicon device processing to form diamond-hexagonal silicon nano-ribbons. With an appropriate temperature anneal applied to ...

Nano-optoelectronic Integration on Silicon Nano-optoelectronic Integration on Silicon Nano-optoelectronic Integration on Silicon

All rights reserved INFORMATION TO ALL USERS The quality of this reproduction is dependent upon the quality of the copy submitted. In the unlikely event that the author did not send a complete manuscript and there are missing pages, these will be noted. Also, if material had to be removed, a note will indicate the deletion. Modern silicon technology offers unprecedented spatial and temporal con...

Kerfless Wafering: Porous Silicon Reorganization and Epitaxial Silicon Growth

Epitaxial growth of non-cubic silicon

We report about the formation of a Si twinning-superlattice (TSL). Si layers containing 1808 rotation twin boundaries arranged periodical along the [111] direction and only separated by 2.5 nm (corresponding to TSL) have been prepared by molecular beam epitaxy. The method consists of repeating of several growth and annealing circles on boron(B)-predeposited undoped Si substrates. It is shown th...

Influence of kinetic roughening on the epitaxial growth of silicon

-The low temperature homoepitaxial growth of silicon has been probed iii situ by Reflection High Energy Electron Diffraction jRHEED) in a Molecular Beam Epitaxy jMBE)